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- superior inadvertent write protection ? sector protection - hardware method to disable any combination of sectors from program or erase operations - temporary sector unprotect allows code changes in previously locked sectors sector protect/chip unprotect for 5v only system 100,000 minimum erase/program cycles latch-up protected to 100ma from -1v to vcc+1v boot code sector architecture - t = top boot sector - b = bottom boot sector low vcc write inhibit is equal to or less than 3.2v erase suspend/ erase resume - suspends an erase operation to read data from, or program data to a sector that is not being erased, then resume the erase operation. hardware reset pin - resets internal state mechine to the read mode 20 years data retention package type: - 44-pin sop - 48-pin tsop - all pb-free devices are rohs compliant general description the mx29f200c t/b is a 2-mega bit, single 5 volt flash memory organized as 1m word x16 or 2m bytex8 mxic's flash memories offer the most cost-effective and reli- able read/write non-volatile random access memory. the mx29f200c t/b is packaged in 44-pin sop and 48- pin tsop. it is designed to be reprogrammed and erased in-system or in-standard eprom programmers. the standard mx29f200c t/b offers access time as fast as 55ns, allowing operation of high-speed microproces- sors without wait states. to eliminate bus contention, the mx29f200c t/b has separate chip enable (ce#) and output enable (oe# ) controls. mxic's flash memories augment eprom functionality with in-circuit electrical erasure and programming. the mx29f200c t/b uses a command register to manage this functionality. the command register allows for 100% features 5.0v10% for read, erase and write operation 131072x16/262144x8 switchable fast access time: 55/70/90ns compatible with mx29f200t/b device low power consumption - 40ma maximum active current@5mhz - 1ua typical standby current command register architecture - byte/word programming (9us/11us typical) - sector erase (16k-bytex1, 8k-bytex2, 32k-bytex1, and 64k-byte x3) auto erase (chip & sector) and auto program - automatically erase any combination of sectors or the whole chip with erase suspend capability. - automatically program and verify data at specified address status reply - data# polling & toggle bit for detection of program and erase cycle completion. ready/busy# pin(ry/by#) - provides a hardware method or detecting program or erase cycle completion compatibility with jedec standard - pinout and software compatible with single-power supply flash ttl level control inputs and fixed power supply levels during erase and programming, while maintaining maxi- mum eprom compatibility. mxic flash technology reliably stores memory contents even after 100,000 erase and program cycles. the mxic cell is designed to optimize the erase and programming mechanisms. in addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. the mx29f200c t/b uses a 5.0v 10% vcc supply to perform the high reliability erase and auto program/erase algorithms. the highest degree of latch-up protection is achieved with mxic's proprietary non-epi process. latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1v to vcc + 1v. 1 p/n:pm1250 rev. 1.0, dec. 14, 2005 mx29f200c t/b 2m-bit [256kx8/128kx16] cmos flash memory
2 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b pin configurations 44 sop(500mil) 48 tsop(type i) (12mm x 20mm) pin description symbol pin name a0-a16 address input q0-q14 data input/output q15/a-1 q15(word mode)/lsb addr.(byte mode) ce# chip enable input oe# output enable input reset# hardware reset pin, active low we# write enable input ry/by# read/busy output byte# word/byte selection input vcc power supply pin (+5v) gnd ground pin nc pin not connected internally 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 nc ry/by# nc a7 a6 a5 a4 a3 a2 a1 a0 ce# gnd oe# q0 q8 q1 q9 q2 q10 q3 q11 reset# we# a8 a9 a10 a11 a12 a13 a14 a15 a16 byte# gnd q15/a-1 q7 q14 q6 q13 q5 q12 q4 vcc mx29f200c t/b a15 a14 a13 a12 a11 a10 a9 a8 nc nc we# reset# nc nc ry/by# nc nc a7 a6 a5 a4 a3 a2 a1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 a16 byte# gnd q15/a-1 q7 q14 q6 q13 q5 q12 q4 vcc q11 q3 q10 q2 q9 q1 q8 q0 oe# gnd ce# a0 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 mx29f200c t/b (normal type) a15 a14 a13 a12 a11 a10 a9 a8 nc nc we# reset# nc nc ry/by# nc nc a7 a6 a5 a4 a3 a2 a1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 a16 byte# gnd q15/a-1 q7 q14 q6 q13 q5 q12 q4 vcc q11 q3 q10 q2 q9 q1 q8 q0 oe# gnd ce# a0 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 mx29f200c t/b (reverse type)
3 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b mx29f200ct top boot sector addresses tables sector size address range (in hexadecimal) (kbytes/ a16 a15 a14 a13 a12 kwords) (x8)address range (x16) address range sa0 0 0 x x x 64/32 00000h-0ffffh 00000h-07fffh sa1 0 1 x x x 64/32 10000h-1ffffh 08000h-0ffffh sa2 1 0 x x x 64/32 20000h-2ffffh 10000h-17fffh sa3110xx 32/16 30000h-37fffh 18000h-1bfffh sa411100 8/4 38000h-39fffh 1c000h-1cfffh sa511101 8/4 3a000h-3bfffh 1d000h-1dfffh sa61111x 16/8 3c000h-3ffffh 1e000h-1ffffh mx29f200cb bottom boot sector addresses tables sector size address range (in hexadecimal) (kbytes/ a16 a15 a14 a13 a12 kwords) (x8)address range (x16) address range sa00000x 16/8 00000h-03fffh 00000h-01fffh sa1000108/4 04000h-05fffh 02000h-02fffh sa2000118/4 06000h-07fffh 03000h-03fffh sa3001xx 32/16 08000h-0ffffh 04000h-07fffh sa4 0 1 x x x 64/32 10000h-1ffffh 08000h-0ffffh sa5 1 0 x x x 64/32 20000h-2ffffh 10000h-17fffh sa6 1 1 x x x 64/32 30000h-3ffffh 18000h-1ffffh sector structure
4 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b block diagram control input logic program/erase high voltage write s tat e machine (wsm) s tat e register flash array x-decoder address latch and buffer y-pass gate y-decoder array source hv command data decoder command data latch i/o buffer pgm data hv program data latch sense amplifier a-1/q15 q0-q14 a0-a16 ce# oe# we#
5 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b automatic erase algorithm mxic's automatic erase algorithm requires the user to write commands to the command register using stand- ard microprocessor write timings. the device will auto- matically pre-program and verify the entire array. then the device automatically times the erase pulse width, verifies the erase and counts the number of sequences. a status bit toggling between consecutive read cycles provides feedback to the user as to the status of the programming operation. register contents serve as inputs to an internal state- machine which controls the erase and programming circuitry. during write cycles, the command register internally latches addresses and data needed for the programming and erase operations. during a system write cycle, addresses are latched on the falling edge, and data are latched on the rising edge of we#. mxic's flash technology combines years of eprom experience to produce the highest levels of quality, reliability, and cost effectiveness. the mx29f200c t/b electrically erases all bits simultaneously using fowler- nordheim tunneling. the bytes are programmed by using the eprom programming mechanism of hot electron injection. during a program cycle, the state-machine will control the program sequences and command register will not respond to any command set. during a sector erase cycle, the command register will only respond to erase suspend command. after erase suspend is complete, the device stays in read mode. after the state machine has completed its task, it will allow the command register to respond to its full command set. automatic programming the mx29f200c t/b is byte programmable using the automatic programming algorithm. the automatic pro- gramming algorithm does not require the system to time out sequence or verify the data programmed. the typical chip programming time of the mx29f200c t/b at room temperature is less than 4.5 seconds. automatic chip erase the entire chip is bulk erased using 10 ms erase pulses according to mxic's automatic chip erase algorithm. typical erasure at room temperature is accomplished in less than two second. the automatic erase algorithm automatically programs the entire array prior to electrical erase. the timing and verification of electrical erase are internally controlled by the device. automatic sector erase the mx29f200c t/b is sector(s) erasable using mxic's auto sector erase algorithm. sector erase modes allow sectors of the array to be erased in one erase cycle. the automatic sector erase algorithm automatically pro- grams the specified sector(s) prior to electrical erase. the timing and verification of electrical erase are inter- nally controlled by the device. automatic programming algorithm mxic's automatic programming algorithm requires the user to only write program set-up commands (include 2 unlock write cycle and a0h) and a program command (program data and address). the device automatically times the programming pulse width, verifies the pro- gram, and counts the number of sequences. a status bit similar to data# polling and a status bit toggling between consecutive read cycles, provides feedback to the user as to the status of the programming operation.
6 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b first bus second bus third bus fourth bus fifth bus sixth bus command bus cycle cycle cycle cycle cycle cycle cycle addr data addr data addr data addr data addr data addr data reset 1 xxxh f0h read 1 ra rd read silicon id word 4 555h aah 2aah 55h 555h 90h adi ddi byte 4 aaah aah 555h 55h aaah 90h adi ddi sector protect word 4 555h aah 2aah 55h 555h 90h (sa) xx00h verify x02h xx01h byte 4 aaah aah 555h 55h aaah 90h (sa) 00 x04h 01 program word 4 555h aah 2aah 55h 555h a0h pa pd byte 4 aaah aah 555h 55h aaah a0h pa pd chip erase word 6 555h aah 2aah 55h 555h 80h 555h aah 2aah 55h 555h 10h byte 6 aaah aah 555h 55h aaah 80h aaah aah 555h 55h aaah 10h sector erase word 6 555h aah 2aah 55h 555h 80h 555h aah 2aah 55h sa 30h byte 6 aaah aah 555h 55h aaah 80h aaah aah 555h 55h sa 30h sector erase suspend 1 xxxh b0h sector erase resume 1 xxxh 30h unlock for sector 6 555h aah 2aah 55h 555h 80h 555h aah 2aah 55h 555h 20h protect/unprotect notes: 1. adi = address of device identifier; a1=0, a0 =0 for manufacture code, a1=0, a0 =1 for device code.(refer to table 3) ddi = data of device identifier : c2h for manufacture code,51h/57h(x8) and 2251h/2257h(x16) for device code. x = x can be vil or vih ra=address of memory location to be read. rd=data to be read at location ra. 2. pa = address of memory location to be programmed. pd = data to be programmed at location pa. sa = address to the sector to be erased. 3. the system should generate the following address patterns: 555h or 2aah to address a0~a10. address bit a11~a16=x=don't care for all address commands except for program address (pa) and sector address (sa). write sequence may be initiated with a11~a16 in either state. 4. for sector protection verify operation : if read out data is 01h, it means the sector has been protected. if read out data i s 00h, it means the sector is still not being protected. command definitions device operations are selected by writing specific ad- dress and data sequences into the command register. writing incorrect address and data values or writing them in the improper sequence will reset the device to the read mode. table 1 defines the valid register command sequences. note that the erase suspend (b0h) and erase resume (30h) commands are valid only while the sector erase operation is in progress. either of the two reset command sequences will reset the device(when applicable). table 1. software command definitions
7 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b pins ce# oe# we# a0 a1 a6 a9 q0 ~ q15 mode read silicon id l l h l l x v id (2) c2h (byte mode) manufacturer code(1) 00c2h (word mode) read silicon id l l h h l x v id (2) 51h/57h (byte mode) device code(1) 2251h/2257h(word mode) read l l h a0 a1 a6 a9 d out standby h x x x x x x high z output disable l h h x x x x high z write l h l a0 a1 a6 a9 d in (3) sector protect without 12v l h l x x l h x system (6) chip unprotect without 12v l h l x x h h x system (6) verify sector protect/ l l h x h x h code(5) unprotect without 12v system (7) reset x x x x x x x high z notes: 1. manufacturer and device codes may also be accessed via a command register write sequence. refer to table 1. 2. vid is the silicon-id-read high voltage, 11.5v to 12.5v. 3. refer to table 1 for valid data-in during a write operation. 4. x can be vil or vih. 5. code=00h/0000h means unprotected. code=01h/0001h means protected. a16~a12=sector address for sector protect. 6. refer to sector protect/unprotect algorithm and waveform. must issue "unlock for sector protect/unprotect" command before "sector protect/unprotect without 12v system" command. 7. the "verify sector protect/unprotect without 12v system" is only following "sector protect/unprotect without 12v system" command. table 2. mx29f200c t/b bus operations
8 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b read/reset command the read or reset operation is initiated by writing the read/ reset command sequence into the command register. microprocessor read cycles retrieve array data. the device remains enabled for reads until the command register contents are altered. if program-fail or erase-fail happen, the write of f0h will reset the device to abort the operation. a valid command must then be written to place the device in the desired state. silicon-id-read command flash memories are intended for use in applications where the local cpu alters memory contents. as such, manufacturer and device codes must be accessible while the device resides in the target system. prom programmers typically access signature codes by rais- ing a9 to a high voltage. however, multiplexing high voltage onto address lines is not generally desired system design practice. the mx29f200c t/b contains a silicon-id-read opera- tion to supplement traditional prom programming meth- odology. the operation is initiated by writing the read silicon id command sequence into the command regis- ter. following the command write, a read cycle with a1=vil,a0=vil retrieves the manufacturer code of c2h/ 00c2h. a read cycle with a1=vil, a0=vih returns the device code of 51h/2251h for mx29f200ct, 57h/2257h for mx29f200cb. set-up automatic chip/sector erase com- mands chip erase is a six-bus cycle operation. there are two "unlock" write cycles. these are followed by writing the "set-up" command 80h. two more "unlock" write cycles are then followed by the chip erase command 10h. the automatic chip erase does not require the device to be entirely pre-programmed prior to executing the automatic chip erase. upon executing the automatic chip erase, the device will automatically program and verify the entire memory for an all-zero data pattern. when the device is automatically verified to contain an all-zero pattern, a self-timed chip erase and verify begin. the erase and verify operations are completed when the data on q7 is "1" at which time the device returns to the read mode. the system does not require to provide any control or timing during these operations. when using the automatic chip erase algorithm, note that the erase automatically terminates when adequate erase margin has been achieved for the memory array(no erase-verified command is required). if the erase operation was unsuccessful, the data on q5 is "1"(see table 4), indicating an erase operation exceed internal timing limit. the automatic erase begins on the rising edge of the last we# pulse in the command sequence and terminates when the data on q7 is "1" and the data on q6 stops toggling for two consecutive read cycles, at which time the device returns to the read mode. pins a0 a1 q15~q8 q7 q6 q5 q4 q3 q2 q1 q0 code(hex) code manufacture code word vil vil 00h 11000010 00c2h byte vil vil x 11000010c2h device code word vih vil 22h 01010001 2251h for mx29f200ct byte vih vil x 0101000151h device code word vih vil 22h 01010111 2257h for mx29f200cb byte vih vil x 0101011157h sector portection x vih x 00000001 01h(protected) verification x vih x 00000000 00h(unprotected) table 3. expanded silicon id code
9 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b sector erase commands the automatic sector erase does not require the device to be entirely pre-programmed prior to executing the automatic set-up sector erase command and automatic sector erase command. upon executing the automatic sector erase command, the device will automatically program and verify the sector(s) memory for an all-zero data pattern. the system does not require to provide any control or timing during these operations. when the sector(s) is automatically verified to contain an all-zero pattern, a self-timed sector erase and verification begin. the erase and verification operations are complete when the data on q7 is "1" and the data on q6 stops toggling for two consecutive read cycles, at which time the device returns to the read mode. the system does not require to provide any control or timing during these operations. when using the automatic sector erase algorithm, note that the erase automatically terminates when adequate erase margin has been achieved for the memory array (no erase-verified command is required). sector erase is a six-bus cycle operation. there are two "unlock" write cycles. these are followed by writing the set-up command 80h. two more "unlock" write cycles are then followed by the sector erase command 30h. the sector address is latched on the falling edge of we#, while the command(data) is latched on the rising edge of we#. sector addresses selected are loaded into internal register on the sixth falling edge of we#. each successive sector load cycle started by the falling edge of we# must begin within 30us from the rising edge of the preceding we#. otherwise, the loading period ends and internal auto sector erase cycle starts. (monitor q3 to determine if the sector erase timer window is still open, see section q3, sector erase timer.) any command other than sector erase (30h) or erase suspend (b0h) during the time- out period resets the derice to read mode. erase suspend this command is only valid while the state machine is executing automatic sector erase operation, and therefore will only be responded to period during automatic sector erase operation. writing the erase suspend command during the sector erase time-out immediately terminates the time-out period and suspends the erase operation. after this command has been executed, the command register will initiate erase suspend mode. the state machine will return to read mode automatically after suspend is ready. at this time, state machine only allows the command register to respond to the read memory array, erase resume and program commands. the system can determine the status of the program operation using the q7 or q6 status bits, just as in the standard program operation. after an erase-suspend program operation is complete, the system can once again read array data within non-suspended sectors.
10 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b status q7 q6 q5 q3 q2 ry/by# note1 note2 byte program in auto program algorithm q7# toggle 0 n/a no 0 toggle auto erase algorithm 0 toggle 0 1 toggle 0 erase suspend read 1 no 0 n/a toggle 1 (erase suspended sector) toggle in progress erase suspended mode erase suspend read data data data data data 1 (non-erase suspended sector) erase suspend program q7# toggle 0 n/a n/a 0 byte program in auto program algorithm q7# toggle 1 n/a no 0 toggle exceeded time limits auto erase algorithm 0 toggle 1 1 toggle 0 erase suspend program q7# toggle 1 n/a n/a 0 table 4. write operation status notes: 1. q7 and q2 require a valid address when reading status information. refer to the appropriate subsection for further details. 2. q5 switches to '1' when an auto program or auto erase operation has exceeded the maximum timing limits. see "q5:exceeded timing limits " for more information.
11 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b erase resume this command will cause the command register to clear the suspend state and return back to sector erase mode but only if an erase suspend command was previously issued. erase resume will not have any effect in all other conditions. another erase suspend command can be written after the chip has resumed erasing. however, a time delay must be required after the erase resume command, if the system implements an endless erase suspend/resume loop, or the number of erase suspend/ resume is exceeded 1024 times. the erase times will be expended if the erase behavior always be suspended. set-up automatic program commands to initiate automatic program mode, a three-cycle command sequence is required. there are two "unlock" write cycles. these are followed by writing the automatic program command a0h. once the automatic program command is initiated, the next we# pulse causes a transition to an active program- ming operation. addresses are latched on the falling edge, and data are internally latched on the rising edge of the we# pulse. the rising edge of we# also begins the programming operation. the system does not require to provide further controls or timings. the device will automatically provide an adequate internally generated program pulse and verify margin. if the program operation was unsuccessful, the data on q5 is "1"(see table 4), indicating the program operation exceed internal timing limit. the automatic programming operation is completed when the data read on q6 stops toggling for two consecutive read cycles and the data on q7 and q6 are equivalent to data written to these two bits, at which time the device returns to the read mode(no program verify command is required). data# polling-q7 the mx29f200c t/b also features data# polling as a method to indicate to the host system that the automatic program or erase algorithms are either in progress or completed. while the automatic programming algorithm is in opera- tion, an attempt to read the device will produce the complement data of the data last written to q7. upon completion of the automatic program algorithm an at- tempt to read the device will produce the true data last written to q7. the data# polling feature is valid after the rising edge of the fourth we# pulse of the four write pulse sequences for automatic program. while the automatic erase algorithm is in operation, q7 will read "0" until the erase operation is competed. upon completion of the erase operation, the data on q7 will read "1". the data# polling feature is valid after the rising edge of the sixth we# pulse of six write pulse sequences for automatic chip/sector erase. the data# polling feature is active during automatic program/erase algorithm or sector erase time-out.(see section q3 sector erase timer) ry/by#:ready/busy# the ry/by# is a dedicated, open-drain output pin that indicates whether an automatic erase/program algo- rithm is in progress or complete. the ry/by# status is valid after the rising edge of the final we# pulse in the command sequence. since ry/by# is an open-drain output, several ry/by# pins can be tied together in parallel with a pull-up resistor to vcc. if the outputs is low (busy), the device is actively erasing or programming. (this includes programming in the erase suspend mode.) if the output is high (ready), the device is ready to read array data (including during the erase suspend mode), or is in the standby mode. q6:toggle bit i toggle bit i on q6 indicates whether an automatic program or erase algorithm is in progress or complete, or whether the device has entered the erase suspend mode. toggle bit i may be read at any address, and is valid after the rising edge of the final we# pulse in the command sequence(prior to the program or erase opera- tion), and during the sector time-out. during an automatic program or erase algorithm opera- tion, successive read cycles to any address cause q6 to toggle. the system may use either oe# or ce# to control the read cycles. when the operation is complete, q6 stops toggling.
12 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b after an erase command sequence is written, if all sectors selected for erasing are protected, q6 toggles and returns to reading array data. if not all selected sectors are protected, the automatic erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. the system can use q6 and q2 together to determine whether a sector is actively erasing or is erase sus- pended. when the device is actively erasing (that is, the automatic erase algorithm is in progress), q6 toggling. when the device enters the erase suspend mode, q6 stops toggling. however, the system must also use q2 to determine which sectors are erasing or erase-sus- pended. alternatively, the system can use q7. if a program address falls within a protected sector, q6 toggles for approximately 2us after the program com- mand sequence is written, then returns to reading array data. q6 also toggles during the erase-suspend-program mode, and stops toggling once the automatic program algo- rithm is complete. table 4 shows the outputs for toggle bit i on q6. q2:toggle bit ii the "toggle bit ii" on q2, when used with q6, indicates whether a particular sector is actively erasing (that is, the automatic erase algorithm is in process), or whether that sector is erase-suspended. toggle bit i is valid after the rising edge of the final we# pulse in the command sequence. q2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (the system may use either oe# or ce# to control the read cycles.) but q2 cannot distinguish whether the sector is actively erasing or is erase-suspended. q6, by compari- son, indicates whether the device is actively erasing, or is in erase suspend, but cannot distinguish which sec- tors are selected for erasure. thus, both status bits are required for sectors and mode information. refer to table 4 to compare outputs for q2 and q6. reading toggle bits q6/ q2 whenever the system initially begins reading toggle bit status, it must read q7-q0 at least twice in a row to determine whether a toggle bit is toggling. typically, the system would note and store the value of the toggle bit after the first read. after the second read, the system would compare the new value of the toggle bit with the first. if the toggle bit is not toggling, the device has completed the program or erase operation. the system can read array data on q7-q0 on the following read cycle. however, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of q5 is high (see the section on q5). if it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as q5 went high. if the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. if it is still toggling, the device did not complete the operation successfully, and the system must write the reset command to return to reading array data. the remaining scenario is that system initially determines that the toggle bit is toggling and q5 has not gone high. the system may continue to monitor the toggle bit and q5 through successive read cycles, determining the status as described in the previous paragraph. alternatively, it may choose to perform other system tasks. in this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation. q5 exceeded timing limits q5 will indicate if the program or erase time has exceeded the specified limits(internal pulse count). under these conditions q5 will produce a "1". this time-out condition which indicates that the program or erase cycle was not successfully completed. data# polling and toggle bit are the only operating functions of the device under this condition. if this time-out condition occurs during sector erase operation, it specifies that a particular sector is bad and it may not be reused. however, other sectors are still functional and may be used for the program or erase
13 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b operation. the device must be reset to use other sectors. write the reset command sequence to the device, and then execute program or erase command sequence. this allows the system to continue to use the other active sectors in the device. if this time-out condition occurs during the chip erase operation, it specifies that the entire chip is bad or combination of sectors are bad. if this time-out condition occurs during the byte program- ming operation, it specifies that the entire sector contain- ing that byte is bad and this sector maynot be reused, (other sectors are still functional and can be reused). the time-out condition may also appear if a user tries to program a non blank location without erasing. in this case the device locks out and never completes the automatic algorithm operation. hence, the system never reads a valid data on q7 bit and q6 never stops toggling. once the device has exceeded timing limits, the q5 bit will indicate a "1". please note that this is not a device failure condition since the device was incor- rectly used. q3 sector erase timer after the completion of the initial sector erase command sequence, the sector erase time-out will begin. q3 will remain low until the time-out is complete. data# polling and toggle bit are valid after the initial sector erase command sequence. if data# polling or the toggle bit indicates the device has been written with a valid erase command, q3 may be used to determine if the sector erase timer window is still open. if q3 is high ("1") the internally controlled erase cycle has begun; attempts to write subsequent commands to the device will be ignored until the erase operation is completed as indicated by data# polling or toggle bit. if q3 is low ("0"), the device will accept additional sector erase commands. to insure the command has been accepted, the system software should check the status of q3 prior to and following each subsequent sector erase command. if q3 were high on the second status check, the command may not have been accepted. data protection the mx29f200c t/b is designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transition. during power up the device automati- cally resets the state machine in the read mode. in addition, with its control register architecture, alteration of the memory contents only occurs after successful completion of specific command sequences. the device also incorporates several features to prevent inadvertent write cycles resulting from vcc power-up and power- down transition or system noise. temporary sector unprotect this feature allows temporary unprotection of previously protected sector to change data in-system. the tempo- rary sector unprotect mode is activated by setting the reset# pin to vid(11.5v-12.5v). during this mode, formerly protected sectors can be programmed or erased as un-protected sector. once vid is remove from the reset# pin,all the previously protected sectors are protected again. write pulse "glitch" protection noise pulses of less than 5ns(typical) on ce# or we# will not initiate a write cycle. logical inhibit writing is inhibited by holding any one of oe# = vil, ce# = vih or we# = vih. to initiate a write cycle ce# and we# must be a logical zero while oe# is a logical one. power supply decoupling in order to reduce power switching effect, each device should have a 0.1uf ceramic capacitor connected between its vcc and gnd.
14 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b sector protection without 12v system the mx29f200c t/b also feature a hardware sector protection method in a system without 12v power suppply. the programming equipment do not need to supply 12 volts to protect sectors. the details are shown in sector protect algorithm and waveform. chip unprotect without 12v system the mx29f200c t/b also feature a hardware chip unprotection method in a system without 12v power supply. the programming equipment do not need to supply 12 volts to unprotect all sectors. the details are shown in chip unprotect algorithm and waveform. power-up sequence the mx29f200c t/b powers up in the read only mode. in addition, the memory contents may only be altered after successful completion of the predefined command sequences.
15 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b temporary sector unprotect operation start reset# = vid (note 1) perform erase or program operation reset# = vih temporary sector unprotect completed(note 2) operation completed 2. all previously protected sectors are protected again. notes : 1. all protected sectors are temporary unprotected. vid=11.5v~12.5v
16 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b temporary sector unprotect parameter std. description test setup allspeed options unit tvidr vid rise and fall time (see note) min 500 ns trsp reset# setup time for temporary sector unprotect min 4 us note: not 100% tested temporary sector unprotect timing diagram reset# ce# we# ry/by# tvidr tvidr program or erase command sequence 12v 0 or 5v 0 or 5v trsp
17 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b reset# timing waveform parameter std description test setup all speed options unit tready1 reset# pin low (during automatic algorithms) max 20 us to read or write (see note) tready2 reset# pin low (not during automatic max 500 ns algorithms) to read or write (see note) trp1 reset# pulse width (during automatic algorithms) min 10 us trp2 reset# pulse width (not during automatic algorithms) min 500 ns trh reset# high time before read(see note) min 0 ns trb1 ry/by# recovery time(to ce#, oe# go low) min 0 ns trb2 ry/by# recovery time(to we# go low) min 50 ns note:not 100% tested trh trb1 trb2 tready1 trp2 trp1 ry/by# ce#, oe# reset# reset timing not during automatic algorithms reset timing during automatic algorithms ry/by# ce#, oe# reset# we# tready2
18 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b absolute maximum ratings rating value ambient operating temperature -40 o c to 85 o c ambient temperature with power -55 o c to 125 o c applied storage temperature -65 o c to 125 o c applied input voltage -0.5v to 7.0v applied output voltage -0.5v to 7.0v vcc to ground potential -0.5v to 7.0v a9 -0.5v to 13.5v notice: stresses greater than those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only and functional operational sections of this specification is not implied. exposure to absolute maximum rating conditions for extended period may affect reliability. notice: specifications contained within the following tables are subject to change. dc/ac operating conditions mx29f200c t/b -55 -70 -90 operating temperature industrial -40 o c to 85 o c -40 o c to 85 o c -40 o c to 85 o c vcc power supply 5v 10% 5v 10% 5v 10% capacitance ta = 25 o c, f = 1.0 mhz symbol parameter min. typ max. unit conditions cin1 input capacitance 8 pf vin = 0v cin2 control pin capacitance 12 pf vin = 0v cout output capacitance 12 pf vout = 0v
19 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b dc characteristics symbol parameter min. typ max. unit conditions ili input leakage current 1 ua vin = gnd to vcc ilo output leakage current 10 ua vout = gnd to vcc isb1 standby vcc current 1 ma ce# = vih isb2 1 5 ua ce# = vcc + 0.3v icc1 operating vcc current 40 ma iout = 0ma, f=5mhz icc2 50 ma iout = 0ma, f=10mhz vil input low voltage -0.3(note1) 0.8 v vih input high voltage 0.7xvcc vcc+0.3 v vol output low voltage 0.45 v iol = 2.1ma,vcc=vcc min voh1 output high voltage(ttl) 2.4 v ioh = -2ma,vcc=vcc min voh2 output high voltage(cmos) vcc-0.4 v ioh = - 100ua,vcc=vcc min notes: 1. vil min. = -1.0v for pulse width is equal to or less than 50 ns. vil min. = -2.0v for pulse width is equal to ot less than 20 ns. 2. vih max. = vcc + 1.5v for pulse width is equal to or less than 20 ns if vih is over the specified maximum value, read operation cannot be guaranteed. read operation ac characteristics 29F200C-55 29f200c-70 29f200c-90 symbol parameter min. max. min. max. min. max. unit conditions tacc address to output delay 55 70 90 ns ce#=oe#=vil tce ce# to output delay 55 70 90 ns oe#=vil toe oe# to output delay 30 30 35 ns ce#=vil tdf oe# high to output float (note1) 0 20 0 20 0 20 ns ce#=vil toh address to output hold 0 0 0 ns ce#=oe#=vil note: 1.tdf is defined as the time at which the output achieves the open circuit condition and data is no longer driven. test conditions: input pulse levels: 0.45v/0.7xvcc for 70ns & 90ns, 0v/3v for 55ns input rise and fall times: is equal to or less than 10ns for 70ns & 90ns, 5ns for 55ns output load: 1 ttl gate + 100pf (including scope and jig) for 70ns & 90ns, 1ttlgate+30pf for 55ns max. reference levels for measuring timing: 0.8v, 2.0v for 70ns & 90ns,1.5v for 55ns
20 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b read timing waveforms a0~16 ce# oe# tacc we# vih vil vih vil vih vil vih vil voh vol high z high z data valid toe tdf tce data q0~7 toh add valid
21 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b dc characteristics symbol parameter min. typ max. unit conditions icc1 (read) operating vcc current 40 ma iout=0ma, f=5mhz icc2 50 ma iout=0ma, f=10mhz icc3 (program) 50 ma in programming icc4 (erase) 50 ma in erase icces vcc erase suspend current 2 ma ce#=vih, erase suspended notes: 1. vil min. = -0.6v for pulse width is equal to or less than 20ns. 2. if vih is over the specified maximum value, programming operation cannot be guaranteed. 3. icces is specified with the device de-selected. if the device is read during erase suspend mode, current draw is the sum of icces and icc1 or icc2. 4. all current are in rms unless otherwise noted.
22 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b ac characteristics ta=-40 c to 85 c, vcc=5v 10% speed option symbol parameter min. 55(note 2) 70 90 unit toes oe# setup time min. 0 0 0 ns tcwc command programming cycle min. 55 70 90 ns tcep we# programming pulse width min. 35 35 45 ns tceph we# programming pulse width high min. 20 20 20 ns tas address setup time min. 0 0 0 ns tah address hold time min. 45 45 45 ns tds data setup time min. 35 35 35 ns tdh data hold time min. 0 0 0 ns tcesc ce# setup time before command write min. 0 0 0 ns tdf output disable time (note 1) max. 20 20 20 ns taetc erase time in auto chip erase typ. 4 4 4 s max. 32 32 32 s taetb erase time in auto sector erase typ. 0.7 0.7 0.7 s max. 15 15 15 s tavt programming time in auto verify typ. 9/11 9/11 9/11 us (byte/word program time) max. 300/360 300/360 300/360 us tbal sector address load time min. 50 50 50 us tch ce# hold time min. 0 0 0 ns tcs ce# setup to we# going low min. 0 0 0 ns notes: 1. tdf defined as the time at which the output achieves the open circuit condition and data is no longer driven. 2. under condition of vcc=5v 10%,cl=30pf,vih/vil=3.0v/0v,voh/vol=1.5v/1.5v,iol=2ma,ioh=2ma.
23 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b switching test circuits switching test waveforms for 29f200c t/b-70 and 29f200c t/b-90 switching test waveforms for 29f200c t/b-55 2.0v 2.0v 0.8v 0.8v test points 0.7xvcc 0.45v ac testing: inputs are driven at 0.7xvcc for a logic "1" and 0.45v for a logic "0". input pulse rise and fall times are < 10ns. output input 1.5v 1.5v test points 3.0v 0v ac testing: inputs are driven at 3.0v for a logic "1" and 0v for a logic "0". input pulse rise and fall times are < 5ns. output input device under test diodes=in3064 or equivalent cl 6.2k ohm 2.7k ohm +5v cl=100pf including jig capacitance for 70ns and 90ns cl=30pf including jig capacitance for 55ns
24 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b command write timing waveform address a0~16 ce# oe# we# din tds tah data q0-7 tdh tcs tch tcwc tceph tcep toes tas vcc 5v vih vil vih vil vih vil vih vil vih vil add valid
25 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b automatic programming timing waveform automatic programming timing waveform (word mode) one byte data is programmed. verify in fast algorithm and additional programming by external control are not required because these operations are executed auto- matically by internal control circuit. programming com- pletion can be verified by data# polling and toggle bit checking after automatic verification starts. device outputs data# during programming and data# after programming on q7.(q6 is for toggle bit; see toggle bit, data# polling, timing waveform). tcwc tas tcep tds tdh tdf vcc 5v ce# oe# q0~q2, q4(note 1) we# a11~a16 tceph tah add valid tcesc q7 command in add valid a0~a10 command in command in data in data command in command in command in data in data data # tavt toe data# polling 2aah 555h 555h command #aah command #55h command #a0h (q0~q7) notes: (1). q6:toggle bit, q5:timing-limit bit, q3: time-out bit
26 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b automatic programming algorithm flowchart (word mode) start write data aah address 555h write data 55h address 2aah write program data/address write data a0h address 555h yes no toggle bit checking q6 not toggled verify byte ok yes q5 = 1 reset auto program completed auto program exceed timing limit no invalid command yes no
27 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b all data in chip are erased. external erase verification is not required because data is erased automatically by internal control circuit. erasure completion can be verified by data# polling and toggle bit checking after automatic chip erase timing waveform (word mode) automatic chip erase timing waveform automatic erase starts. device outputs 0 during erasure and 1 after erasure 0n q7.(q6 is for toggle bit; see toggle bit, data# polling, timing waveform) tcwc tas tcep tds tdh tdf vcc 5v ce# oe# q0~q2 ,q4(note 1) we# a11~a16 tceph tah tcesc q7 command in a0~a10 command in command in command in command in command in taetc data# polling 2aah 555h 555h command #aah command #55h command #80h (q0~q7) notes: (1). q6:toggle bit, q5:timing-limit bit, q3: time-out bit 555h 2aah 555h command in command in command #aah command in command in command #55h command in command in command #10h
28 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b automatic chip erase algorithm flowchart (word mode) start write data aah address 555h write data 55h address 2aah write data aah address 555h write data 80h address 555h yes no toggle bit checking q6 not toggled write data 10h address 555h write data 55h address 2aah reset auto chip erase exceed timing limit data# polling q7 = 1 yes yes q5 = 1 auto chip erase completed no no invalid command
29 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b automatic sector erase timing waveform (word mode) automatic sector erase timing waveform sector data indicated by a12 to a16 are erased. external erase verification is not required because data are erased automatically by internal control circuit. erasure completion can be verified by data# polling and toggle bit checking after automatic erase starts. device outputs 0 during erasure and 1 after erasure on q7.(q6 is for toggle bit; see toggle bit, data# polling, timing waveform) tah sector address0 555h 2aah 2aah 555h 555h sector address1 sector addressn vcc 5v ce# oe# q0,q1, q4(note 1) we# a12~a16 q7 a0~a10 command in command in command in command in command in command in command in command in command in command in command in command in command in command in command #30h command #30h command #30h command #55h command #aah command #80h command #55h command #aah (q0~q7) command in command in tdh tds tcep tcwc taetb tbal data# polling tceph tas notes: (1). q6:toggle bit, q5:timing-limit bit, q3: time-out bit, q2: toggle bit
30 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b automatic sector erase algorithm flowchart start write data aah address 555h write data 55h address 2aah write data aah address 555h write data 80h address 555h yes no toggle bit checking q6 not toggled write data 30h sector address write data 55h address 2aah reset auto sector erase exceed timing limit data# polling q7 = 1 q5 = 1 auto sector erase completed load other sector addrss if necessary (load other sector address) yes no last sector to erase time-out bit checking q3=1 ? toggle bit checking q6 toggled ? invalid command no yes yes no yes no
31 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b erase suspend/erase resume flowchart note: if the system implements an endless erase suspend/resume loop, or the number of erase suspend/resume is exceeded 1024 times, then the 400us time delay must be put into consideration. start write data b0h toggle bit checking q6 not toggled erase suspend yes no write data 30h delay 400us (note) continue erase reading or programming end read array or program another erase suspend ? no yes yes no erase resume
32 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b timing waveform for sector protection for system without 12v toe data oe# we# ce# a1 a6 * see the following note! verify 01h a16-a12 sector address 5v note1: must issue "unlock for sector protect/unprotect" command before sector protection for a system without 12v provided. note2: except f0h toggle bit polling don't care (note 2) tcep f0h
33 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b timing waveform for chip unprotection for system without 12v toe data we# ce# a1 verify 00h a6 note1: must issue "unlock for sector protect/unprotect" command before sector unprotection for a system without 12v provided. oe# tcep 5v toggle bit polling don't care (note 2) * see the following note! f0h note2: except f0h
34 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b sector protection algorithm for system without 12v start set up sector addr (a16,a15,a14,a13,a12) plscnt=1 sector protection complete data=01h? ye s oe#=vih, a9=vih ce#=vil, a6=vil activate we# pulse to start data don't care set ce#=oe#=vil a9=vih read from sector addr=sa, a1=1 protect another sector? write reset command device failed plscnt=32? ye s no increment plscnt no write "unlock for sector protect/unprotect" command (table1) toggle bit checking q6 not toggled no ye s ye s no
35 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b sector unprotection algorithm for system without 12v start protect all sectors plscnt=1 chip unprotect complete data=00h? ye s set oe#=a9=vih ce#=vil,a6=1 activate we# pulse to start data don't care set oe#=ce#=vil a9=vih,a1=1 set up first sector addr all sectors have been verified? write reset command device failed plscnt=1000? no increment plscnt no read data from device ye s ye s no increment sector addr * it is recommended before unprotect the whole chip, all sectors should be protected in advance. write "unlock for sector protect/unprotect" command (table 1) toggle bit checking dq6 not toggled ye s no
36 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b id code read timing waveform tacc tce tacc toe toh toh tdf data out c2h/00c2h 51h/57h (byte mode) 2251h/2257h (word mode) vid vih vil add a9 add a2-a8 a10-a17 ce# oe# we# a1 data out data q0-q15 vcc 5v vih vil vih vil vih vil vih vil vih vil vih vil
37 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b recommended operating conditions at device power-up ac timing illustrated in figure a is recommended for the supply voltages and the control signals at device power-up. if the timing in the figure is ignored, the device may not operate correctly. figure a. ac timing at device power-up notes : 1. sampled, not 100% tested. 2. this specification is applied for not only the device power-up but also the normal operations. symbol parameter notes min. max. unit tvr vcc rise time 1 20 500000 us/v tr input signal rise time 1,2 20 us/v tf input signal fall time 1,2 20 us/v vcc address ce# we# oe# data tvr tacc tr or tf tce tf vcc(min) gnd vih vil vih vil vih vil vih vil voh high z vol valid ouput valid address tr or tf tr toe tf tr
38 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b min. max. input voltage with respect to gnd on all pins except i/o pins -1.0v 13.5v input voltage with respect to gnd on all i/o pins -1.0v vcc + 1.0v current -100ma +100ma includes all pins except vcc. test conditions: vcc = 5.0v, one pin at a time. latch-up characteristics erase and programming performance(1) note: 1. not 100% tested, excludes external system level over head. 2. typical values measured at 25 c,5v. 3. maximum values measured at worst condition: 90 c, 4.5v, 100k cycles. parameter min. unit data retention time 20 years data retention limits parameter min. typ.(2) max.(3) units sector erase time 0.7 15 sec chip erase time 4 32 sec byte programming time 9 300 us word programming time 11 360 us chip programming time byte mode 2.3 6.8 sec word mode 1.5 4.5 sec erase/program cycles 100,000 cycles
39 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b part no. access operating standby package remark time (ns) current max. (ma) current max. (ua) mx29f200ctmi-55 55 40 5 44 pin sop mx29f200ctmi-70 70 40 5 44 pin sop mx29f200ctmi-90 90 40 5 44 pin sop mx29f200ctti-55 55 40 5 48 pin tsop (normal type) mx29f200ctti-70 70 40 5 48 pin tsop (normal type) mx29f200ctti-90 90 40 5 48 pin tsop (normal type) mx29f200cbmi-55 55 40 5 44 pin sop mx29f200cbmi-70 70 40 5 44 pin sop mx29f200cbmi-90 90 40 5 44 pin sop mx29f200cbti-55 55 40 5 48 pin tsop (normal type) mx29f200cbti-70 70 40 5 48 pin tsop (normal type) mx29f200cbti-90 90 40 5 48 pin tsop (normal type) mx29f200ctmi-55g 55 40 5 44 pin sop pb-free mx29f200ctmi-70g 70 40 5 44 pin sop pb-free mx29f200ctmi-90g 90 40 5 44 pin sop pb-free mx29f200ctti-55g 55 40 5 48 pin tsop pb-free (normal type) mx29f200ctti-70g 70 40 5 48 pin tsop pb-free (normal type) mx29f200ctti-90g 90 40 5 48 pin tsop pb-free (normal type) mx29f200cbmi-55g 55 40 5 44 pin sop pb-free mx29f200cbmi-70g 70 40 5 44 pin sop pb-free mx29f200cbmi-90g 90 40 5 44 pin sop pb-free mx29f200cbti-55g 55 40 5 48 pin tsop pb-free (normal type) mx29f200cbti-70g 70 40 5 48 pin tsop pb-free (normal type) mx29f200cbti-90g 90 40 5 48 pin tsop pb-free (normal type) ordering information
40 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b part name description mx 29 f 70 c t t i g option: g: lead-free package blank: normal speed: 55:55ns 70:70ns 90:90ns temperature range: i: industrial (-40? c to 85? c) package: m:sop t: tsop boot block type: t: top boot b: bottom boot revision: c density & mode: 200: 2m, x8/x16 boot sector type: f: 5v device: 29: flash 200
41 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b package information
42 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b
43 p/n:pm1250 rev. 1.0 , dec. 14, 2005 mx29f200c t/b revision history revision no. description page date 1.0 1. removed "preliminary" title p1 dec/14/2005 2. removed commercial grade all 3. added access time: 55ns all
mx29f200c t/b m acronix i nternational c o., l td . headquarters: tel:+886-3-578-6688 fax:+886-3-563-2888 europe office : tel:+32-2-456-8020 fax:+32-2-456-8021 hong kong office : tel:+86-755-834-335-79 fax:+86-755-834-380-78 japan office : kawasaki office : tel:+81-44-246-9100 fax:+81-44-246-9105 osaka office : tel:+81-6-4807-5460 fax:+81-6-4807-5461 singapore office : tel:+65-6346-5505 fax:+65-6348-8096 taipei office : tel:+886-2-2509-3300 fax:+886-2-2509-2200 m acronix a merica, i nc. tel:+1-408-262-8887 fax:+1-408-262-8810 http : //www.macronix.com macronix international co., ltd. reserves the right to change product and specifications without notice.

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